IBM’s research into phase-change memory could bring faster, more reliable storage beyond today’s flash memory limits.
Earlier this month, tech giant IBM announced a more efficient way to use phase-change memory. This new method is a breakthrough with the potential to transition electronic devices from standard RAM and flash to the much faster and more reliable phase-change memory, or PCM. Phase-change memory is a type of non-volatile optical storage that manipulates the behavior of chalcogenide glass, the same method of data storage used on rewriteable Blu-ray discs. By applying an electric current to PCM cells, the material switches between amorphous and crystalline structures, creating the binary 0s and 1s used in digital storage.