Posts Tagged ‘micron’

Micron Technology Announces 232 Layer 3D NAND by End of 2022

Micron announced the industry’s first 3D NAND memory device with 232 layers on Thursday. The company intends to use its new 232-layer 3D NAND products for a variety of applications, including solid-state drives, and expects to begin mass production of such chips in late 2022.

micron, 3d nand, 232 layer

Micron’s 232-layer 3D NAND device has a raw capacity of 1Tb and a 3D TLC architecture (128GB). The chip is based on Micron’s CMOS under array (CuA) architecture and stacks two arrays of 3D NAND on top of each other using the NAND string stacking technique.

The CuA design, combined with 232 layers of NAND, will significantly reduce the die size of Micron’s 1Tb 3D TLC NAND memory, allowing Micron to price devices featuring these chips more aggressively or simply increase its margins.

Micron did not specify I/O speeds or the number of planes in its new 232L 3D TLC NAND IC, but it did state that the new memory will outperform existing 3D NAND devices, which will be especially useful for next-generation SSDs with a PCIe 5.0 interface.

Speaking of SSDs, Micron’s executive vice president of technology and products, Scott DeBoer, stated that the company has worked closely with developers of in-house and third-party NAND controllers (for SSDs and other NAND-based storage devices) to ensure proper support for the new type of memory (and make sure those upcoming drives end up in our best SSDs list).

“We optimized [232-layer 3D NAND] technology around what we need to make the world’s fastest managed NAND and both datacenter and client SSD products,” said DeBoer. “The combination of controllers, both internal and external, has been a strong element of our vertical product integration focus to ensure that we have optimized NAND and controller technology for what we need to deliver future leadership products.”

Among the benefits of its 232-layer 3D TLC NAND are Micron mentioned lower power consumption compared to previous-generation nodes, which will be another advantage given Micron’s historical focus on mobile applications and relationships with device makers.

Given that Micron will begin production of 232-layer 3D TLC NAND devices in late calendar 2022, we can expect SSDs powered by the new memory to arrive in 2023.

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Micron – Offers NAND with Highest Number of Layers = 176

Micron, 7450, 176 Layer

Micron Technology, Inc. (Nasdaq: MU) has announced the availability of a sample of the world’s first vertically-integrated 176-layer NAND solid-state drive (SSD) for data center applications. This new data center SSD features Micron’s industry-leading NAND with 176 layers of storage cells and proven CMOS-under-the-array technology for an ultra-efficient design.

Last year, organizations that used high encryption standards for data at rest and in motion paid 29.4 percent less for a data breach than organizations that used low or no standard encryption. Micron SSDs include self-encrypting drive functionality and Microsoft eDrive options to help protect against data breaches and tailor security to specific data protection needs.

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The Micron c200 is 1TB of microSD Beastly Data Storage

Micron, with the corporate office based in Boise Idaho, introduces the c200 microSD card with a data storage range from 128GB to 1TB.  No that wasn’t a typo, One Terabyte of storage.  The card was designed to address the demand around 4K video recording and playback. 

The card has read speeds near 100MB/s and write speeds of near 95MB/s.  The c200 card collection can reach these speeds because of Dynamic SLC cache; which is intelligent maintenance during idle time for sustained peak performance.  The Micron microSD card uses the UHS-1 Speed Class 3 for capture and Video Speed Class 30 for support.  Meaning to get these transfer rates, the host device must also be UHS-1 compliant.

c200 microSD 1TB

In case you are wondering, the card uses Micron 98-layer 3D QLC NAND memory, which is cost effective for both consumers and commercial customers.

If you have an Android device, you can be even happier with the card meeting the Application Performance Class 2 specification which is built-in memory expansion for compatible Android devices.

The Application Performance Class 2 (A2) is defined by the Secure Digital (SD) Physical 6.0 specification. A2 makes SD memory cards higher performance devices than A1 devices by using functions of the Command Queuing and Cache framework. The Application Performance Class can be applied to UHS SDHC/SDXC Memory Card product family.

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Intel, Micron With 3-bit Cell Technology

Intel and Micron are two of the primary NAND flash memory makers and are partners in such manufacturing.  Earlier this month they announced new technology capable of 3-bit per cell storage which is based off 34-nanometer technology.

3-bit cell technology

The 3-bit per cell concept allows for more storage in the same realestat of flash memory.  This imporvement yields larger storage capacity of flash drives and SSD at a lower price. However, the new technology doesn’t come without some draw backs.  According to Kevin Kilbuck, Director of NAND marketing at Micron indicates the 3-bit per cell technology isn’t as stable as they’d like. For example, Kevin indicates the 3-bit per cell NAND technology will be found in less mission critical devices like USB flash drives, SD memory and CF memory.  The technology will not find it’s way into SolidState Disks until the manufacturing process is perfected.
“The companies explained that they need more experience in production volumes before they will be confident to position it as a chip suitable for the high-write environment of the SSD”
You can expect the 3-bit per cell to hit the streets sometime in Q1 of 2010. However, as with most technology, it’s on the way out before it’s ever even in; SanDisk and Toshiba disclosed in February that they had developed 4-bit-per-cell technology, which the two companies said was the highest-capacity flash memory technology in the industry. Continue Reading 2 Comments

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