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19nm Process from Toshiba to Shrink 128Gbit Memory

Toshiba announced this morning of mass production in 128Gbit NAND flash memory with three-bits-per-cell storage in 19nm process. What this means is more storage space in a smaller area. The 128Gbit memory is only 170mm square. The reduced size implies cost of manufacturing will go down, efficiency will go up. The down side is the TLC or three bit per cell, is less stable then two bits per cell like MLC or multi layer cell technology. This isn’t a big concern for most users as the TLC flash will go into less important devices like USB flashdrives, MP3 players, phones and other hand held devices. The more crucial technologies will remain with SLC or single layer cell or MLC, multi layer cell memory. Toshiba and SanDisk share research and development and jointly invest in manufacturing.

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